Preparation of Ta-Doped TiO2 Using Ta2O5 as the Doping Source

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单位1School of Materials Science and Engineering,China University of Mining and Technology;2Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences;3Shanghai Key Laboratory of Modern Optics System,School of Optics-Electrical and Computer Engineering,University of Shanghai for Science and Technology收起
来源中国物理快报(英文版(
出版年2015
期号第8期
摘要
A novel method for preparing Ta-doped TiO2 via using Ta2O5 as tie doping source is proposed.The preparation process combines the hydrothermal fluorination of Ta2 O5 and the subsequent formation of Ta-doped TiO2 sol.The results show that the doped sample annealed at 393 K generates an unstable intermediate NH4TiOF3,which converts into anatase TiO2 with the increase of temperature.After annealing at >673K,the Ta-doped TiO2nanocrystals with the grain size <20nm are obtained.Both the XRD and TG-DSC results confirm that Ta doping prevents the anatase-rutile crystal transition of TiO2.The band gap values of the doped samples,as obtained by UV-vis diffuse reflectance spectra,are smaller than that of pure anatase TiO2.The first-principle pseudopotential method calculations indicate that Ta5+ iies in the TiO2 lattice at the interstitial position.

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